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Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1200 R 33 KF2_B5
vorlaufige Daten preliminary data
Hochstzulassige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t - value, Diode Spitzenverlustleistung der Diode maximum power dissipation diode Isolations-Prufspannung insulation test voltage Teilentladungs-Aussetzspannung partial discharge extinction voltage tP = 1 ms T vj = 25C T vj = -25C T C = 80C T C = 25 C tP = 1 ms, T C = 80C VCES VCES IC,nom. IC ICRM 3300 3300 1200 2000 2400 V V A A A
T C=25C, Transistor
Ptot
14,7
kW
VGES
+/- 20V
V
IF
1200
A
IFRM
2400
A
VR = 0V, tp = 10ms, T vj = 125C
I2t
444
k A2s
T vj = 125C
PRQM
1200
kW
RMS, f = 50 Hz, t = 1 min.
VISOL
10,2
kV
RMS, f = 50 Hz, QPD typ. 10pC (acc. To IEC 1287)
VISOL
5,1
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Gateladung gate charge Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 1200A, VGE = 15V, Tvj = 25C IC = 1200A, VGE = 15V, Tvj = 125C IC = 120 mA, VCE = VGE, T vj = 25C VGE(th) VCE sat
min.
4,2
typ.
3,40 4,30 5,1
max.
4,25 5,00 6,0 V V V
f = 1MHz, Tvj = 25C, VCE = 25V, VGE = 0V
Cies
-
150
-
nF
f = 1MHz, Tvj = 25C, VCE = 25V, VGE = 0V
Cres
-
8
-
nF
VGE = -15V ... + 15V
QG
-
22
-
C
VCE = 3300V, VGE = 0V, Tvj = 25C
ICES
-
-
5
mA
VCE = 0V, VGE = 20V, Tvj = 25C
IGES
-
-
400
nA
prepared by: Alfons Wiesenthal approved by: Christoph Lubke
date of publication : 2002-10-31 revision: 2.0
1 (9)
DB_FZ1200R33KF2 B5_2.0.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1200 R 33 KF2_B5
vorlaufige Daten preliminary data
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 1200 A, VCE = 1800V VGE = 15V, RG = 2,7 , CGE = 220nF, T vj = 25C VGE = 15V, RG = 2,7 , CGE = 220nF, T vj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 1200 A, VCE = 1800V VGE = 15V, RG = 2,7 , CGE = 220nF, T vj = 25C VGE = 15V, RG = 2,7 , CGE = 220nF, T vj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 1200 A, VCE = 1800V VGE = 15V, RG = 1,8 , CGE = 220nF, T vj = 25C VGE = 15V, RG = 1,8 , CGE = 220nF, T vj = 125C Fallzeit (induktive Last) fall time (inductive load) IC = 1200 A, VCE = 1800V VGE = 15V, RG = 1,8 , CGE = 220nF, T vj = 25C VGE = 15V, RG = 1,8 , CGE = 220nF, T vj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module Modul-Leitungswiderstand, Anschlusse - Chip lead resistance, terminals - chip T C = 25C IC = 1200 A, VCE = 1800V, VGE = 15V RG = 1,5 , CGE = 220 nF, Tvj = 125C, LS = 40nH IC = 1200 A, VCE = 1800V, VGE = 15V RG = 1,8 , CGE = 220 nF, Tvj = 125C, LS = 40nH tP 10sec, VGE 15V T Vj125C, VCC=2500V, VCEmax=VCES -LsCE *dI/dt ISC LsCE 6000 18 A nH Eoff 1600 mWs Eon 2900 mWs tf 0,20 0,20 s s td,off 1,90 2,10 s s tr 0,45 0,48 s s td,on 0,70 0,65 s s
min.
typ.
max.
RCC'+EE'
-
0,12
-
m
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current IF = 1200 A, VGE = 0V, Tvj = 25C IF = 1200 A, VGE = 0V, Tvj = 125C IF = 1200 A, - diF/dt = 4600 A/sec VR = 1800V, VGE = -10V, Tvj = 25C VR = 1800V, VGE = -10V, Tvj = 125C Sperrverzogerungsladung recovered charge IF = 1200 A, - diF/dt = 4600 A/sec VR = 1800V, VGE = -10V, Tvj = 25C VR = 1800V, VGE = -10V, Tvj = 125C Abschaltenergie pro Puls reverse recovery energy IF = 1200 A, - diF/dt = 4600 A/sec VR = 1800V, VGE = -10V, Tvj = 25C VR = 1800V, VGE = -10V, Tvj = 125C Erec 680 1400 mWs mWs Qr 710 1320 As As IRM 1250 1350 A A VF
min.
-
typ.
2,80 2,80
max.
3,50 3,50 V V
2 (9)
DB_FZ1200R33KF2 B5_2.0.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1200 R 33 KF2_B5
vorlaufige Daten preliminary data
Thermische Eigenschaften / Thermal properties
min.
Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode/Diode, DC pro Modul / per module Paste = 1 W/m*K / grease = 1 W/m*K RthCK RthJC -
typ.
0,006
max.
0,0085 0,0170 K/W K/W K/W
T vj max
-
-
150
C
T vj op
-40
-
125
C
T stg
-40
-
125
C
Mechanische Eigenschaften / Mechanical properties
Gehause, siehe Anlage case, see appendix Material Modulgrundplatte material of module baseplate Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Gewicht weight Schraube M6 / screw M6 Anschlusse / terminals M4 Anschlusse / terminals M8 M M M G 4,25 1,8 8 1400 AlSiC
AlN
56
mm
26
mm
> 600
-
5,75 2,1 10
Nm Nm Nm g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.
3 (9)
DB_FZ1200R33KF2 B5_2.0.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1200 R 33 KF2_B5
vorlaufige Daten preliminary data Ausgangskennlinie (typisch) Output characteristic (typical) I = f (VCE) C
VGE = 15V
2400
2000
Tvj = 25C Tvj = 125C
1600
IC [A]
1200
800
400
0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0
VCE [V]
Ausgangskennlinienfeld (typisch) Output characteristic (typical)
2400
I = f (VCE) C
Tvj = 125C
2000
VGE = 8V VGE = 9V VGE = 10V
1600
VGE = 12V VGE = 15V VGE = 20V
IC [A]
1200
800
400
0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0
VCE [V]
4 (9)
DB_FZ1200R33KF2 B5_2.0.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1200 R 33 KF2_B5
vorlaufige Daten preliminary data Ubertragungscharakteristik (typisch) Transfer characteristic (typical) I = f (VGE) C
VCE = 20V
2400
Tvj = 25C Tvj = 125C
2000
1600
IC [A]
1200
800
400
0 5 6 7 8 9 10 11 12 13
VGE [V]
Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical)
2400
Tvj = 25C
I = f (VF) F
2000
Tvj = 125C
1600
IF [A]
1200
800
400
0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0
VF [V]
5 (9)
DB_FZ1200R33KF2 B5_2.0.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1200 R 33 KF2_B5
vorlaufige Daten preliminary data Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)
Tvj=125C, VCE = 1800V, VGE=15V, RGon = 1,5 , RGoff = 1,8 , CGE = 220 nF
Schaltverluste (typisch) Switching losses (typical)
10000 9000 8000 7000 E [mJ] 6000 5000 4000 3000 2000 1000 0 0 300 600
Eon Eoff Erec
900
1200
1500
1800
2100
2400
IC [A]
Schaltverluste (typisch) Switching losses (typical)
12000
Eon Eoff Erec
Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)
Tvj = 125C, IC = 1200 A , VCE = 1800V , VGE = 15V, CGE = 220nF
10000
8000 E [mJ]
6000
4000
2000
0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
RG []
6 (9)
DB_FZ1200R33KF2 B5_2.0.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1200 R 33 KF2_B5
vorlaufige Daten preliminary data
VGE = 15V, RG,off = 1,8, CGE = 220 nF Tvj= 125C
Sicherer Arbeitsbereich IGBT (RBSOA) Reverse bias safe operation area IGBT (RBSOA)
3000
2400
1800 IC [A]
1200
IC,Modul IC,Chip
600
0 0 500 1000 1500 2000 2500 3000 3500
VCE [V]
Sicherer Arbeitsbereich Diode (SOA) safe operation area Diode (SOA)
3000
Tvj= 125C
2400
1800 IR [A]
1200
600
0 0 500 1000 1500 2000 2500 3000 3500
VR [V]
7 (9)
DB_FZ1200R33KF2 B5_2.0.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1200 R 33 KF2_B5
vorlaufige Daten preliminary data Transienter Warmewiderstand Transient thermal impedance
0,1
Z thJC = f (t)
Zth: IGBT Zth: Diode
0,01
ZthJC [K / W]
0,001
0,0001 0,001
0,01
0,1
1
10
t [sec]
i ri [K/kW] : IGBT i [sec] : IGBT ri [K/kW] : Diode i [sec]
: Diode
1 3,83 0,03 7,65 0,03
2 2,13 0,10 4,25 0,10
3 0,51 0,30 1,02 0,30
4 2,04 1,00 4,08 1,00
8 (9)
DB_FZ1200R33KF2 B5_2.0.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1200 R 33 KF2_B5
vorlaufige Daten preliminary data
Auere Abmessungen / extenal dimensions
9 (9)
DB_FZ1200R33KF2 B5_2.0.xls

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